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  , o ne. 20 stern ave. springfield, new jersey 07081 u.sa telephone: (973) 376-2922 (212)227-6005 fax: (9731 376-8960 amplifier tvansistors npn silicon maximum ratings MPS918* mps3563 rating collector-emitter voltage collector-base voltage emitter-base voltage collector current ? continuous total device dissipation @ t/\ 25c derate above 25c total device dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo "c pd pd tj> tstg MPS918 15 30 3.0 mps3563 12 30 2.0 50 350 2.8 0.85 6.8 -55 to +150 unit vdc vdc vdc madc mw mw/c watts mw/c c thermal characteristics to-92 characteristic thermal resistance, junction to ambient thermal resistance, junction to case symbol rflja<1> rojc max 357 147 unit c/w c/w collector 3 emitter electrical characteristics (ta = 25c unless otherwise noted) characteristic symbol | min max off characteristics unit collector-emitter breakdown voltage(2) oc = 3.0 madc, ib = 0) MPS918 mps3563 collector-base breakdown voltage (ic = 1.0|iadc, le = 0) MPS918 (1c = 100 nadc, ie = 0) mps3563 emitter-base breakdown voltage (le = 10|iadc, lc = 0) MPS918 mps3563 collector cutoff current (vcb = 15 vdc, ie = o) MPS918 mps3563 v(br)ceo v(br)cbo v(br)ebo 'cbo 15 12 30 30 3.0 2.0 ? ? ? 10 50 vdc vdc vdc nadc 1. roja is measured with the device soldered into a typical printed circuit board. 2. pulse test: pulse width < 300 (is; duty cycle < 1.0%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. oiinlifv
MPS918 mps3563 electrical characteristics (ta = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain(2) (1c = 3.0 madc, vce = 1 0 vdc) MPS918 (ic = 8.0madc, vce = 10vdc) mps3563 collector-emitter saturation voltage (ic = 10madc, |b = 1.0 madc) MPS918 base-emitter saturation voltage (ic = 10 madc, ib = 1.0 madc) MPS918 hfe vce(sat) vbe(sat) 20 20 ? ? 200 0.4 1.0 vdc vdc small-signal characteristics current-gain ? bandwidth product(2) (1c = 4.0 madc, vce = 10 vdc. f = 100 mhz) MPS918 (1c = 8.0 madc, vce = ? vdc, f = 100 mhz) mps3563 output capacitance (vcb = ovdc, le = 0, f =1.0 mhz) MPS918 (vcb = 10 vdc, le = 0, f = 1.0 mhz) MPS918 (vcb = 1 vdc. !e = 0. f = 1 - mhz) mps3563 input capacitance (veb = 0.5vdc, lc = 0, f =1.0 mhz) MPS918 small-signal current gain (1c = 8.0 madc, vc = 1 0 vdc, f = 1 .0 khz) mps3563 noise figure (1c = 1 .0 madc, vce = 6.0 vdc, rs = 40 kij. f = 60 mhz) mps91 8 ft cobo cibo hfe nf 600 600 ? ? 20 ? 1500 3.0 1.7 1.7 2.0 250 6.0 mhz pf pf ? db functional test common-emitter amplifier power gain (1c = 6.0 madc, vcb = 12 vdc, f = 200 mhz) MPS918 (1c = 8.0 madc, vce = 10 vdc, f = 200 mhz) mps3563 (gftj + gre < -20 db) power output (1c = 8.0 madc, vcb = 15 vdc, f= 500 mhz) MPS918 oscillator collector efficiency (1c = 8.0 madc, vcb = 15 vdc, pout = 30 mw, f = 500 mhz) MPS918 gpe pout n 15 14 30 25 ? ? _ db mw % 2. pulse test: pulse width < 300 (is; duty cycle < 1.0%. section x-x tyle1: pin1. emitter 2. base 3. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlung dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. dimension f appues between p and l dimensions d and j apply between l and k mimimum. lead dimension is uncontrolled in p and beyond dimension k minimum. dim a b c d f g h j k l n p r inches min 0.175 0.290 0.125 0.018 0.016 0.045 0.095 0.018 0.500 0.250 0.080 0.135 max 0.205 0.310 0.165 0.021 0.019 0.055 0.105 0.024 ? 0.105 0.100 ? millimeters min 4.44 7.37 3.18 0.457 0.407 1.15 2.42 0.46 12.70 6.35 2.04 3.43 max 5.21 7.87 4.19 0.533 0.482 1.39 2.66 0.61 ? ? 2.66 2.54 ?


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